GB/T 14140.1-1993
Replaced
T/CNIA 0061-2020
Active
Group standards
T/CNIA 0061-2020 Determination of impurity content in silicon epitaxy using inductively coupled plasma mass spectrometry
T/CNIA 0061-2020 Determination of impurity content in silicon epitaxy using inductively coupled plasma mass spectrometry
Price:
$ 20.00
Basic Information
Standard Code:
T/CNIA 0061-2020
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Electronic devices and specialized materials, parts, and structural components
ICS Name:
Comprehensive Testing of Metal Materials
Publish Date:
2020-05-27
Implement Date:
2020-08-01
Scope
Main technical content: This standard specifies the method for determining the content of boron, sodium, magnesium, aluminum, potassium, calcium, phosphorus, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, arsenic, and lead in silicon epitaxy-grade silicon tetrachloride using an inductively coupled plasma mass spectrometer (ICP-MS). This standard is applicable to the determination of the content of boron, sodium, magnesium, aluminum, potassium, calcium, phosphorus, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, arsenic, and lead in silicon epitaxy-grade silicon tetrachloride. The lower limit of detection for each element is 0.01 ng/g.
Development Information
Related Standards
GB/T 14140.2-1993
Replaced
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 15615-1995
Abolished
GB/T 15615-1995 Test method for measuring flexure strength of silicon slices
GB/T 16481-1996
Abolished
GB/T 16481-1996 Standard spectrum tables of microwave plasma torch-atomic emitting spectrum of rare earth
GB/T 1550-1997
Replaced
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1553-1997
Replaced