T/CS 213-2025 Active Group standards

T/CS 213-2025 Test method for DC parameters of metal-oxide-semiconductor field-effect transistor(MOSFET)

T/CS 213-2025 Test method for DC parameters of metal-oxide-semiconductor field-effect transistor(MOSFET)

Publish Date: 2026-01-08 Implement Date: 2026-01-23 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us
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Basic Information

Standard Code: T/CS 213-2025
Standard Type: Group standards
Standard Status: Active
is_force_gb: no
CCS Name: Medical electronic instruments and equipment
ICS Name: Other discrete semiconductor devices
Publish Date: 2026-01-08
Implement Date: 2026-01-23

Scope

This document describes the testing methods for the main DC parameters of metal-oxide-semiconductor field-effect transistors (MOSFETs). This document is applicable to the testing of metal-oxide-semiconductor field-effect transistors (MOSFETs).

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