GB/T 17170-1997 Replaced National standards

GB/T 17170-1997 Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method

Publish Date: 1997-12-22 Implement Date: 1998-08-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 17170-1997

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: Semiconductor materials

Publish Date: 1997-12-22

Implement Date: 1998-08-01

Pages: 6 pages

Development Information

Word Count: 9 Thousand words Pages: 6 pages

Superseded by the following standards

GB/T 17170-2015 Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06