GB/T 11093-1989
Replaced
GB/T 30656-2023
Active
National standards
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
Basic Information
Standard Code:
GB/T 30656-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2023-03-17
Implement Date:
2023-10-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
全国半导体设备和材料标准化技术委员会(SAC/TC 203)、全国半导体设备和材料标准化技术委员会材料分技术委员会(SAC/TC 203/SC 2)
Pages:
16 pages
Scope
本文件规定了4H及6H碳化硅单晶抛光片的牌号及分类、技术要求、试验方法、检验规则、标志、包装、运输、贮存、随行文件和订货单内容。本文件适用于生产电力电子器件、射频微波器件及LED发光器件的外延材料用碳化硅单晶抛光片。
Development Information
Drafting Units:
北京天科合达半导体股份有限公司、中国科学院物理研究所、南京国盛电子有限公司、安徽长飞先进半导体有限公司、有色金属技术经济研究院有限责任公司
Drafting Persons:
陈小龙、彭同华、佘宗静、王波、刘春俊、李素青、郭钰、娄艳芳、郑红军、杨建、骆红、钮应喜
Replace the following standards
Referenced Standards
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers
GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
GB/T 32188-2015 Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
GB/T 32278-2015 Test method for flatness of monocrystalline silicon carbide wafers
GB/T 42271-2022 Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement
GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide
GB/T 32278-2025 Test method for thickness and fltaness of monocrystalline silicon carbide wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced