GB/T 11093-1989
Replaced
GB/T 30656-2023
Active
National standards
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
Price:
$ 74
Basic Information
Standard Code:
GB/T 30656-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2023-03-17
Implement Date:
2023-10-01
Pages:
16 pages
Scope
This document specifies the grades and classification, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents, and order form content of 4H and 6H silicon carbide single-crystal wafers. This document is applicable to silicon carbide single-crystal wafers used as epitaxial materials for the production of power electronics devices, radio frequency and microwave devices, and LED lighting devices.
Development Information
Replace the following standards
Referenced Standards
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers
GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
GB/T 32188-2015 Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
GB/T 32278-2015 Test method for flatness of monocrystalline silicon carbide wafers
GB/T 42271-2022 Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement
GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide
GB/T 32278-2025 Test method for thickness and fltaness of monocrystalline silicon carbide wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced