GB/T 30656-2014 Replaced National standards

GB/T 30656-2014 Polished monocrystalline silicon carbide wafers

GB/T 30656-2014 Polished monocrystalline silicon carbide wafers

Publish Date: 2014-12-31 Implement Date: 2015-09-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 30656-2014

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2014-12-31

Implement Date: 2015-09-01

Pages: 14 pages

Scope

This standard specifies the requirements, inspection methods, inspection rules, marking, packaging, transportation, storage, quality certificates, and order forms (or contracts) for 4H and 6H silicon carbide single-crystal polished wafers.
This standard applies to silicon carbide single-crystal polished wafers prepared by single- or double-sided polishing of 4H and 6H silicon carbide single-crystal grinding wafers. The products are mainly used to fabricate epitaxial substrates for semiconductor lighting and power electronic devices.

Development Information

Word Count: 24 Thousand words Pages: 14 pages

Superseded by the following standards

GB/T 30656-2023 Polished monocrystalline silicon carbide wafers

Referenced Standards

DIN 50448 GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge GB/T 6619-1995 Test methods for bow of silicon slices GB/T 6619-2009 Test methods for bow of silicon wafers GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers—Automated non-contact scanning GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06