T/IAWBS 002-2017 Active Group standards

T/IAWBS 002-2017 Test Method for Surface Defects of Silicon Carbide Epitaxial Wafers

T/IAWBS 002-2017

Publish Date: 2017-12-20 Implement Date: 2017-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Price: $ 20.00

Out of stock

Basic Information

Standard Code: T/IAWBS 002-2017

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical and chemical properties of metals

ICS Name: Semiconductor materials

Publish Date: 2017-12-20

Implement Date: 2017-12-31

Scope

Main technical content: This standard specifies a non-destructive optical measurement method for surface defects of silicon carbide epitaxial wafers used in power devices. This standard is applicable to homogeneous silicon carbide epitaxial layers with a thickness of more than (including) 2 micrometers.