GB/T 14863-1993 Replaced National standards

GB/T 14863-1993 Standard test method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes

Publish Date: 1993-12-30 Implement Date: 1994-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 14863-1993

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Semiconductor diode

ICS Name: Semiconductor materials

Publish Date: 1993-12-30

Implement Date: 1994-10-01

Pages: 11 pages

Development Information

Word Count: 19 Thousand words Pages: 11 pages

Superseded by the following standards

GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes

Referenced Standards

SJ 1550

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06