T/IAWBS 012-2019 Active Group standards

T/IAWBS 012-2019 Surface quality and microsphere density testing method for silicon carbide single crystal polished wafers - Confocal differential interference optical method

Publish Date: 2019-12-27 Implement Date: 2019-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 012-2019

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Compound semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2019-12-27

Implement Date: 2019-12-31

Scope

Scope: This standard specifies the non-destructive optical measurement methods for the surface quality and microtube density of 4H and 6H silicon carbide single-crystal polished wafers, including scratches, pits, protrusions, and particles. This standard applies to silicon carbide single-crystal polished wafers that have undergone chemical mechanical polishing and final cleaning processes. The wafer diameters are 50.8 mm, 76.2 mm, 100.0 mm, and 150.0 mm, with thicknesses ranging from 300 μm to 1000 μm. Main technical content: Silicon carbide, as a representative of the third-generation high-power semiconductor materials, has gained great attention and expectations from the industry. With its rapid market popularity, higher demands are placed on the quality of silicon carbide polished wafers, and the call for high-quality products is growing. Therefore, rapidly detecting the microtube density of single-crystal silicon carbide polished wafers and surface defects such as scratches and particles on the use surface, and accurately counting the number and distribution of various defects are essential means to improve the quality of silicon carbide polished wafers and increase their production capacity. Establishing an accurate and reliable method and standardized detection mechanism for detecting the microtube density and surface quality of silicon carbide single-crystal wafers is of great significance for ensuring uniform control of product surface quality during the R&D, production, and application processes of silicon carbide single-crystal wafers.