T/ZSA 72-2019 Silicon carbide single crystal
T/ZSA 72-2019 Silicon carbide single crystal
Basic Information
Scope
Scope: This standard specifies the necessary related terms, product classification, technical requirements, test methods, inspection rules, and marking, packaging, transportation, storage, etc. for 4H and 6H silicon carbide single crystals. This standard applies to 4H and 6H silicon carbide single crystals prepared by physical vapor deposition method; Main technical content: Silicon carbide materials are the third-generation novel semiconductor materials that have developed in recent decades, following the first-generation semiconductor materials (represented by silicon) and the second-generation semiconductor materials (represented by gallium arsenide and indium phosphide). Their main application fields include LED solid lighting, power electronics, and microwave radio frequency devices. This material has excellent characteristics such as a wide bandgap, high drift velocity, high breakdown electric field, high thermal conductivity, and radiation resistance. It has irreplaceable advantages in high-temperature, high-pressure, high-frequency, and high-power electronic applications, as well as in extreme environments such as aerospace, military, and strong radiation fields. Silicon carbide materials have become the cutting-edge and commanding heights of the global semiconductor industry. With the development of the silicon carbide industry, it is an inevitable trend for the industrial chain to become more specialized, and there will be a large number of manufacturers specializing in processing silicon carbide chips. Silicon carbide single crystals will be traded separately, so it is necessary to develop a separate standard for silicon carbide single crystals.