GB/T 11093-1989
Replaced
T/CNIA 0011-2019
Active
Group standards
T/CNIA 0011-2019 Silicon carbide coating by gas phase deposition method
T/CNIA 0011-2019 Silicon carbide coating by gas phase deposition method
Price:
$ 20.00
Basic Information
Standard Code:
T/CNIA 0011-2019
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nBasic standards
ICS Name:
Semiconductor materials
Publish Date:
2019-02-13
Implement Date:
2019-06-01
Scope
Main technical content: This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificates, and order forms (or contracts) for silicon carbide coatings prepared by gas deposition method (hereinafter referred to as silicon carbide coatings). This standard applies to silicon carbide coatings prepared by gas deposition method using methyltrichlorosilane and hydrogen as the main raw materials. The products are mainly used in the photovoltaic field on the surface of graphite materials.
Development Information
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced