GB/T 24578-2024 Test method for measuring surface metal contamination on semiconductor wafers—Total reflection X-Ray fluorescence spectroscopy
GB/T 24578-2024 Test method for measuring surface metal contamination on semiconductor wafers—Total reflection X-Ray fluorescence spectroscopy
Basic Information
Scope
This document describes the test method for total reflection X-ray fluorescence (TXRF) of metal elements on the surface of semiconductor mirror wafers with a depth of less than 5 nm.
This document is suitable for determining metal contamination on the surface of single-crystal polished or epitaxial wafers such as silicon, silicon on insulated substrates (SOI), germanium, silicon carbide, sapphire, gallium arsenide, indium phosphide, and gallium antimonide. It is particularly suitable for measuring the surface density of contaminating elements in the natural oxide layer or the oxide layer grown by chemical methods after wafer cleaning, with a measurement range of 109 atoms/cm2 to 1,015 atoms/cm2.
The method specified in this document can detect elements with atomic numbers 16 (S) to 92 (U) in the periodic table, and is particularly suitable for metal elements such as potassium, calcium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, arsenic, molybdenum, palladium, silver, tin, tantalum, tungsten, platinum, mercury, and lead.