T/CEMIA 023-2021 Active Group standards

T/CEMIA 023-2021 Silicon single crystal growth quartz crucible

T/CEMIA 023-2021 Silicon single crystal growth quartz crucible

Publish Date: 2021-07-15 Implement Date: 2021-12-25 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CEMIA 023-2021

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Electronic devices and specialized materials, parts, and structural components

ICS Name: Semiconductor materials

Publish Date: 2021-07-15

Implement Date: 2021-12-25

Pages: 16 pages

Scope

This document defines the terms and definitions of quartz crucibles used for growing single-crystal silicon in semiconductors, and specifies the size specifications, technical requirements, test methods, inspection rules, marking, packaging, transportation, and storage.
This document is applicable to quartz crucibles used for growing single-crystal silicon in semiconductors, which are produced by arc melting using high-purity quartz sand (composition: silicon dioxide) as the raw material.

Development Information

Word Count: 25 Thousand words Pages: 16 pages

Referenced Standards

GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 3284-1993 Analytical method of the chemical composition in the quartz glass GB/T 3284-2015 Analytical method of the chemical composition in the quartz glass JC/T 2205-2014 Quartz glass terminology T/CEMIA 004-2018 Silicon single crystal growth used in photovoltaic quartz crucible

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06