GB/T 11093-1989
Replaced
GB/T 2881-2008
Replaced
National standards
GB/T 2881-2008 Silicon metal
GB/T 2881-2008 Silicon metal
Basic Information
Standard Code:
GB/T 2881-2008
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Semi-metal
ICS Name:
Semiconductor materials
Publish Date:
2008-03-31
Implement Date:
2008-09-01
Pages:
5 pages
Scope
This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, and content of purchase orders or contracts for industrial silicon. This standard applies to industrial silicon produced by the melting of silica with carbon-based reducing agents in mineral heat furnaces, which is mainly used for preparing alloys, producing polysilicon, and manufacturing organosilicon products, etc.
Development Information
Replace the following standards
Superseded by the following standards
Referenced Standards
GB/T 8170-1987 Rules for rounding off of numberical values
GB/T 8170-2008 Rules of rounding off for numerical values & expression and judgement of limiting values
GB/T 14849.1-1993 Silicon metal—Determination of iron content—1,10-Phenanthroline spectrophotometric method
GB/T 14849.1-2007 Methods for chemical analysis of silicon metal—Part 1:Determination of iron content—1,10-Phenanthrolion spectrophotometric method
GB/T 14849.1-2020 Methods for chemical analysis of silicon metal—Part 1:Determination of iron content
GB/T 14849.2-1993 Silicon metal—Determination of aluminum content—Chrome azurol S spectrophotometric method
GB/T 14849.2-2007 Methods for chemical analysis of silicon metal—Part 2:Determination of aluminum content—Chrome azurol S spectrophotometric method
GB/T 14849.3-1993 Silicon metal—Determination of calcium content
GB/T 14849.3-2007 Methods for chemical analysis of silicon metal—Part 3:Determination of calcium content
GB/T 14849.3-2020 Methods for chemical analysis of silicon metal—Part 3:Determination of calcium content
GB/T 14849.4-2008 Methods for chemical analysis of silicon metal—Part 4:Determination of elements content Inductively coupled plasma atomic emission spectrometric method
GB/T 14849.4-2014 Methods for chemical analysis of silicon metal—Part 4:Determination of impurity contents—Inductively coupled plasma atomic emission spectrometric method
GB/T 14849.5-2010 Chemical analysis of slion metal—Part 5:Determination of elements content—Analysis using an X-ray fluorescence method
GB/T 14849.5-2014 Methods for chemical analysis of silicon metal—Part 5:Determination of impurity contents—X-ray fluorescence method
GB/T 14849.6-2014 Methods for chemical analysis of silicon metal—Part 6:Determination of carbon—Infrared absorption method
GB/T 14849.7-2015 Methods for chemical analysis of silicon metal—Part 7:Detemination of phosphorus content—Phosphorus molybdenum blue spectrophotometry
GB/T 14849.8-2015 Methods for chemical analysis of silicon metal—Part 8:Determination of copper content—Atomic absorption spectrometric method
GB/T 14849.9-2015 Methods for chemical analysis of silicon metal— Part 9:Determination of titanium content— Diantipyryl methane spectrophotometry
GB/T 14849.10-2016 Methods for chemical analysis of silicon metal—Part 10:Determination of mercury content—Atomic fluorescence spectrometry method
GB/T 14849.11-2016 Methods for chemical analysis of silicon metal—Part 11:Determination of chromium content—1,5-Diphenylcarbohydrazide spectrophotometric method
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced