GB/T 15909-2017 Gas for electronic industry—Silane
GB/T 15909-2017 Gas for electronic industry—Silane
Basic Information
Scope
This standard specifies the technical requirements, test methods, marking, packaging, storage and transportation, and safety aspects of silane gas. This standard applies to silane prepared by the magnesium silicide method, the aluminum sodium hydride reduction of silicon tetrafluoride method, and the chlorosilane disproportionation process. It is mainly used in the production of high-purity polycrystalline silicon, low-temperature chemical vapor deposition of silicon dioxide, chemical vapor deposition of silicon nitride, polycrystalline silicon isolation layers, polycrystalline silicon ohmic contact layers, and heterogeneous or homogeneous silicon epitaxial growth raw materials, as well as ion implantation sources and laser media. It can also be used in the production of solar cells, optical fibers, and photoelectric sensors. Molecular formula: SiH4. Relative molecular mass: 32.117 (based on the 2011 International Relative Atomic Mass).