T/IAWBS 003-2017 Active Group standards

T/IAWBS 003-2017 Carrier concentration measurement of silicon carbide epitaxial layer using mercury probe capacitance-voltage method

Publish Date: 2017-12-20 Implement Date: 2017-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 003-2017

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2017-12-20

Implement Date: 2017-12-31

Scope

Main technical content: This standard specifies the method for determining the carrier concentration in the epitaxial layer of silicon carbide (4H-SiC)—the mercury probe capacitance-voltage method. This standard is applicable to the measurement of the carrier concentration in a single-layer homogeneous silicon carbide epitaxial layer, and it requires that the thickness of the measured silicon carbide epitaxial layer must be greater than the width of the depletion layer under the test bias voltage. The range of carrier concentration measurement is: 1×1014 cm-3 to 5×1017 cm-3. This standard can also be applied to the measurement of the carrier concentration in the silicon carbide substrate.