GB/T 11093-1989
Replaced
YS/T 724-2009
Replaced
Industry standards-Non-ferrous metals
YS/T 724-2009 Metallurgical silicon powder
YS/T 724-2009 Metallurgical silicon powder
Basic Information
Standard Code:
YS/T 724-2009
Standard Type:
Industry standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Semi-metal
ICS Name:
Semiconductor materials
Publish Date:
2009-12-04
Implement Date:
2010-06-01
Pages:
5 pages
Scope
This standard specifies the requirements, test methods, inspection rules, and packaging, marking, transportation, storage, and the content of purchase orders (or contracts) for silica powder.
This standard applies to silica powder produced by crushing and screening industrial silica generated by melting with carbon-based reducing agents in a mineral heat furnace, which is mainly used as a raw material for the production of polycrystalline silicon.
Development Information
Superseded by the following standards
Referenced Standards
GB/T 14849.1-1993 Silicon metal—Determination of iron content—1,10-Phenanthroline spectrophotometric method
GB/T 14849.1-2007 Methods for chemical analysis of silicon metal—Part 1:Determination of iron content—1,10-Phenanthrolion spectrophotometric method
GB/T 14849.1-2020 Methods for chemical analysis of silicon metal—Part 1:Determination of iron content
GB/T 14849.2-1993 Silicon metal—Determination of aluminum content—Chrome azurol S spectrophotometric method
GB/T 14849.2-2007 Methods for chemical analysis of silicon metal—Part 2:Determination of aluminum content—Chrome azurol S spectrophotometric method
GB/T 14849.3-1993 Silicon metal—Determination of calcium content
GB/T 14849.3-2007 Methods for chemical analysis of silicon metal—Part 3:Determination of calcium content
GB/T 14849.3-2020 Methods for chemical analysis of silicon metal—Part 3:Determination of calcium content
GB/T 14849.4-2008 Methods for chemical analysis of silicon metal—Part 4:Determination of elements content Inductively coupled plasma atomic emission spectrometric method
GB/T 14849.4-2014 Methods for chemical analysis of silicon metal—Part 4:Determination of impurity contents—Inductively coupled plasma atomic emission spectrometric method
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced