GB/T 11093-1989
Replaced
GB/T 36706-2018
Active
National standards
GB/T 36706-2018 Polycrystalline indium phosphide
GB/T 36706-2018 Polycrystalline indium phosphide
Basic Information
Standard Code:
GB/T 36706-2018
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2018-09-17
Implement Date:
2019-06-01
Pages:
5 pages
Scope
This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificates, and the contents of purchase orders (or contracts) for indium phosphide polycrystals. This standard applies to indium phosphide polycrystals used in the production of indium phosphide single crystals.
Development Information
Referenced Standards
GB/T 1423-1996 Method of measurement of density for precious metals and their alloys
GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 14844-1993 Designations of semiconductor materials
GB/T 14844-2018 Designations of semiconductor materials
GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced