GB/T 11093-1989
Replaced
T/CASME 2000-2025
Active
Group standards
T/CASME 2000-2025 Technical Specifications for Silicon Carbide Coated Graphite Base Used in Semiconductor Epitaxy
T/CASME 2000-2025 Technical specification for graphite baseplate with silicon carbide coating used for semiconductor epitaxy
Price:
$ 20.00
Basic Information
Standard Code:
T/CASME 2000-2025
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Metallurgy
ICS Name:
Semiconductor materials
Publish Date:
2025-06-06
Implement Date:
2025-07-06
Scope
Scope: This document is applicable to ultra-high purity silicon carbide epitaxy substrates made from high-purity isostatic graphite, which are prepared through processes such as processing, purification, chemical vapor deposition, surface treatment, and cleaning. Main technical content: This document specifies the basic requirements, technical requirements, test methods, inspection rules, packaging, transportation, and storage of silicon carbide coated graphite substrates for semiconductor epitaxy applications.
Development Information
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced