GB/T 11093-1989
Replaced
GB/T 29507-2013
Active
National standards
GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers—Automated non-contact scanning
GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers—Automated non-contact scanning
Basic Information
Standard Code:
GB/T 29507-2013
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2013-05-09
Implement Date:
2014-02-01
Pages:
13 pages
Scope
This standard specifies the testing of the flatness, thickness, and total thickness variation of silicon wafers with a diameter of not less than 50 mm and a thickness of not less than 100 μm, which have undergone cutting, grinding, etching, polishing, epitaxy, or other surface treatments.
This standard is a non-destructive, contactless automatic scanning testing method, suitable for the flatness and thickness testing of clean, dry silicon wafers, and is not affected by changes in the thickness of the silicon wafers, their surface conditions, or their shapes.
Development Information
Referenced Standards
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced