GB/T 11093-1989
Replaced
GB/T 26066-2010
Active
National standards
GB/T 26066-2010 Practice for shallow etch pit detection on silicon
GB/T 26066-2010 Practice for shallow etch pit detection on silicon
Basic Information
Standard Code:
GB/T 26066-2010
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2011-01-10
Implement Date:
2011-10-01
Pages:
6 pages
Scope
This standard specifies the detection method for shallow corrosion pits caused by contamination on the surface of polished wafers or epitaxial wafers using thermal oxidation and chemical selective corrosion techniques.
This standard is applicable to the detection of p-type or n-type polished wafers or epitaxial wafers with an 111 or 100 crystal orientation and a resistivity greater than 0.001 Ω·cm.
Development Information
Referenced Standards
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced