GB/T 13389-2014 Active National standards

GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon

GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon

Publish Date: 2014-12-31 Implement Date: 2015-09-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 13389-2014

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2014-12-31

Implement Date: 2015-09-01

Pages: 28 pages

Scope

This standard specifies the conversion relationship between the resistivity of boron-doped, phosphorus-doped, and arsenic-doped silicon single crystals and the concentration of dopants. This conversion relationship also applies to antimony-doped silicon single crystals, and can be extended to other dopants in silicon with activation energies similar to those of boron and phosphorus.

Development Information

Word Count: 49 Thousand words Pages: 28 pages

Replace the following standards

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Referenced Standards

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06