GB/T 11093-1989
Replaced
GB/T 14141-1993
Replaced
National standards
GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
Basic Information
Standard Code:
GB/T 14141-1993
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
Semiconductor materials
Publish Date:
1993-02-06
Implement Date:
1993-10-01
Pages:
5 pages
Development Information
Superseded by the following standards
Referenced Standards
Adopt standards
ASTM 374-84
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced