GB/T 11093-1989
Replaced
GB/T 14847-1993
Replaced
National standards
GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
Basic Information
Standard Code:
GB/T 14847-1993
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
Semiconductor materials
Publish Date:
1993-12-24
Implement Date:
1994-09-01
Pages:
7 pages
Development Information
Superseded by the following standards
Referenced Standards
GB/T 6379-1986 Precision of test methods Determination of repeatability and reproducibility for a standard test method by interlaboratory tests
GB/T 6379.1-2004 Accuracy(trueness and precision)of measurement methods and results—Part 1:General principles and definitions
GB/T 6379.2-2004 Accuracy(trueness and precision)of measurement methods and results—Part 2:Basic method for the determination of repeatability and reproducibility of a standard measurement method
GB/T 6379.3-2012 Accuracy(trueness and precision)of measurement methods and results—Part 3:Intermediate measures of the precision of a standard measurement method
GB/T 6379.4-2006 Accuracy (trueness and precision) of measurement methods and results—Part 4:Basic methods for the determination of the trueness of a standard measurement method
GB/T 6379.5-2006 Accuracy (trueness and precision) of measurement methods and results—Part 5:alternative methods for the determination of the precision of a standard measurement method
GB/T 6379.6-2009 Accuracy(trueness and precision)of measurement methods and results—Part 6:Use in practice of accuracy values
GB/T 6379.4-2025 Accuracy(trueness and precision)of measurement methods and results—Part 4:Basic methods for the determination of the trueness of a standard measurement method
Adopt standards
ASTM F95-89
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced