T/IAWBS 021-2024
Active
Group standards
T/IAWBS 021-2024 Checking method for edge profile of silicon carbide wafers
T/IAWBS 021-2024 Checking method for edge profile of silicon carbide wafers
Price:
$ 20.00
Basic Information
Standard Code:
T/IAWBS 021-2024
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2024-04-01
Implement Date:
2024-04-09
Scope
Scope: This document specifies the testing method for the edge profile (including cuts) of silicon carbide wafers. This document is applicable to testing the edge profile (including cuts) of silicon carbide wafers after beveling. The testing of the edge profile of wafers made from other materials can be carried out by referring to this standard. Main technical content: This document specifies the testing method for the edge profile (including cuts) of silicon carbide wafers. This document is applicable to testing the edge profile (including cuts) of silicon carbide wafers after beveling. The testing of the edge profile of wafers made from other materials can be carried out by referring to this standard.
Development Information
Related Standards
GB/T 11093-1989
Replaced
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced