T/CASAS 006-2020 Active Group standards

T/CASAS 006-2020 Silicon carbide metal oxide semiconductor field effect transistor generic technical specification

Publish Date: 2020-12-28 Implement Date: 2021-01-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CASAS 006-2020

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Technical management

ICS Name: Semiconductor materials

Publish Date: 2020-12-28

Implement Date: 2021-01-01

Scope

Scope: This document specifies the terminology, symbols, basic rated values and characteristics, inspection requirements, measurement and test methods of silicon carbide metal oxide semiconductor field-effect transistors (hereinafter referred to as "transistors"). Main technical content: This document fully draws on the content of IEC 60747-8-4 "Discrete Semiconductor Devices - Part 8-4: Metal-Oxide-Semiconductor Field-Effect Transistors for Power Switching Applications", and combines the experience summarized by researchers in recent years in the R&D, testing and evaluation of SiC MOSFET power devices and their applications. It provides detailed specifications for the dynamic and static parameters and reliability assessment test methods of SiC MOSFETs. However, due to the current understanding of SiC MOSFET devices by researchers and the development stage of the product's production and application, there may still be some shortcomings. Subsequent improvements and upgrades will be made based on the progress of research.