T/IAWBS 020-2024 Active Group standards

T/IAWBS 020-2024 Carbon-dioxide outer-growth layer deep energy level defect testing: Transient capacitance method

Publish Date: 2024-02-27 Implement Date: 2024-03-05 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 020-2024

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2024-02-27

Implement Date: 2024-03-05

Scope

Main technical content: This document specifies a method for measuring deep-level defects in silicon carbide (SiC) epitaxial materials using the deep-level transient spectroscopy method in transient capacitance technology. This document is suitable for measuring impurities and defects in the epitaxial layer of silicon carbide materials that produce deep levels in the semiconductor band gap. This method can obtain parameters such as the activation energy of deep levels, concentration, and capture cross section of deep levels