T/IAWBS 006-2018 Active Group standards

T/IAWBS 006-2018 Carbon nitride mixed module testing method

Publish Date: 2018-12-06 Implement Date: 2018-12-17 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 006-2018

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Semiconductor discrete devices

ICS Name: Semiconductor materials

Publish Date: 2018-12-06

Implement Date: 2018-12-17

Scope

Scope: This standard specifies the product characteristics requirements such as terminology, graphic symbols, basic rated values, characteristics, and test methods for hybrid power semiconductor modules composed of silicon-based insulated gate bipolar transistors (IGBTs) and silicon carbide Schottky diodes; Main technical content: This standard specifies the product characteristics requirements such as terminology, graphic symbols, basic rated values, characteristics, and test methods for hybrid power semiconductor modules composed of silicon-based insulated gate bipolar transistors (IGBTs) and silicon carbide Schottky diodes. This standard stipulates limit value tests, characteristic parameter tests, and durability tests to confirm the module characteristics based on the characteristic parameters and thereby determine whether the limit value tests are passed. The parameters include (collector-emitter voltage VCES, diode reverse voltage VR, gate-emitter voltage ±VGES during collector-emitter short-circuit, maximum collector current IC, diode forward (DC) current IF, collector peak current ICM, diode forward peak current IFM, reverse bias safe operating area RBSOA, short-circuit safe operating area 1 SCSOA1, diode forward (non-repetitive) surge current IFSM, insulation voltage between terminals and baseplate Visol, etc.). This standard also specifies the information that should be provided in the test report.