T/CIET 1271-2025 Active Group standards

T/CIET 1271-2025 Technical Specifications for the Preparation of Silicon Carbide Epitaxial Wafers by Chemical Vapor Deposition (CVD) Method

T/CIET 1271-2025 Silicon carbide epitaxial wafer preparation specification: Chemical vapor deposition (CVD) method

Publish Date: 2025-05-08 Implement Date: 2025-05-08 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/CIET 1271-2025

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: -

ICS Name: Semiconductor materials

Publish Date: 2025-05-08

Implement Date: 2025-05-08

Scope

Scope: This document specifies the basic requirements, preparation process, quality assurance, and safety requirements for the preparation of 4H silicon carbide (SiC) epitaxial wafers by chemical vapor deposition (CVD). This document is applicable to the production and inspection of 4H-SiC epitaxial wafers prepared by CVD. Main technical content: This document specifies the basic requirements, preparation process, quality assurance, and safety requirements for the preparation of 4H silicon carbide (SiC) epitaxial wafers by chemical vapor deposition (CVD). This document is applicable to the production and inspection of 4H-SiC epitaxial wafers prepared by CVD.