GB/T 26067-2010 Active National standards

GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers

GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers

Publish Date: 2011-01-10 Implement Date: 2011-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 26067-2010
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Analysis methods for semi-metallic and semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2011-01-10
Implement Date: 2011-10-01
Pages: 8 pages

Scope

1.1 This standard qualitatively provides a non-destructive testing method for determining whether the reference incisions of silicon wafers meet the standard limit requirements. The testing principle of this method is also applicable to the measurement of incisions of other sizes.
1.2 In this standard, when the object plane size is 0.1mm, it will form a 2.0mm image on the projection screen after 20 times magnification, and a 5.0mm image after 50 times magnification. This method can detect the smallest size details on the incision contour.
1.3 This standard does not provide a test for the radius of curvature at the top of the incision.

Development Information

Word Count: 13 Thousand words Pages: 8 pages

Referenced Standards

Related Standards

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