T/ZZB 2833-2022 Active Group standards

T/ZZB 2833-2022 High-voltage MOSFET 200 mm silicon epitaxial wafer

Publish Date: 2022-12-08 Implement Date: 2022-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/ZZB 2833-2022

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2022-12-08

Implement Date: 2022-12-31

Scope

Main technical content: This document specifies the terms and definitions, basic requirements, technical requirements, test methods, inspection rules, packaging, marking, quality certificates, transportation and storage, and quality commitments for 200 mm silicon epitaxial wafers (hereinafter referred to as silicon epitaxial wafers) used in high-voltage MOSFETs. This document is applicable to silicon epitaxial wafers with a diameter of 200 mm, an epitaxial layer thickness of 40 μm to 80 μm, an n-type phosphorus-doped epitaxial layer grown on an n-type heavily arsenic-doped silicon polished wafer, and a crystal orientation of <100>. The products are mainly used for manufacturing high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) devices (referred to as high-voltage MOSFETs).