T/IAWBS 014-2021 Active Group standards

T/IAWBS 014-2021 The method for testing the dislocation density of silicon carbide single crystal polished wafers

Publish Date: 2021-09-15 Implement Date: 2021-09-22 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: T/IAWBS 014-2021

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2021-09-15

Implement Date: 2021-09-22

Scope

Scope: This document specifies the test method for dislocation density of silicon carbide single-crystal polished wafers. This document is applicable to the testing of dislocation density in silicon carbide single-crystal polished wafers with a crystal plane deviation angle of 0° to 8° from the {0001} plane; Main technical content: With the development and progress of technology, the third-generation semiconductor material silicon carbide (SiC) has achieved remarkable achievements. The performance indicators of the developed SiC devices far exceed those of current silicon-based devices, and some SiC devices have been successfully industrialized. In some important energy fields, SiC devices are gradually replacing silicon-based power electronics devices and showing great potential. With the advancement of SiC single-crystal and epitaxy technologies, SiC devices will gradually demonstrate their advantages in performance and system cost reduction, and will be widely used in 5G communication, smart grids, high-speed rail transportation, new energy vehicles, consumer electronics, and other fields. Due to the structural characteristics of SiC itself, during the process of using SiC to form substrates, microscopic defects represented by various dislocations (including edge dislocations, screw dislocations, and base plane dislocations) will increase sharply, greatly reducing the quality of the substrates. Therefore, testing the dislocation density of silicon carbide single-crystal polished wafers is of great significance for improving the quality of the substrates and the performance of the devices.