GB/T 11093-1989
Replaced
GB/T 43612-2023
Active
National standards
GB/T 43612-2023 Collection of metallographs on defects in silicon carbide crystal materials
GB/T 43612-2023 Collection of metallographs on defects in silicon carbide crystal materials
Price:
$ 156
Basic Information
Standard Code:
GB/T 43612-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2023-12-28
Implement Date:
2024-07-01
Pages:
49 pages
Scope
This document specifies the morphological characteristics, causes, and defect maps of conductive 4H silicon carbide (4HSiC) crystal materials. This document is applicable to the research, development, production, and inspection and analysis of silicon carbide (crystal ingots, substrate wafers, epitaxial wafers, and subsequent processes) in the semiconductor industry.
Development Information
Referenced Standards
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced