SJ 21442-2018 Specification for semi-insulating gallium nitride monocrystalline wafers of GaN-SI

GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 191-2000 Packaging—Pictorial marking for handling of goods GB/T 191-2008 Packaging—Pictorial marking for handling of goods GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers GB/T 32188-2015 Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate GB/T 32189-2015 Test method for surface roughness of GaN single crystal substrate by atomic force microscope GB/T 32278-2015 Test method for flatness of monocrystalline silicon carbide wafers GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GJB 179A-1996 GB/T 191-2025 Graphical symbols marking for handling and storage of packages