GB/T 11093-1989
Replaced
GB/T 11071-2006
Replaced
National standards
GB/T 11071-2006 Zone-refined germanium ingot
GB/T 11071-2006 Zone-refined germanium ingot
Basic Information
Standard Code:
GB/T 11071-2006
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2006-07-18
Implement Date:
2006-11-01
Pages:
7 pages
Scope
This standard specifies the requirements, test methods, inspection rules, and marking, packaging, transportation, and storage of zone-melted germanium ingots. This standard applies to high-purity germanium ingots made from reduced germanium ingots and germanium single crystal scrap by zone-melted purification. ZGe-0 zone-melted germanium ingots are mainly used for preparing high-purity single crystals for detectors, while ZGe-1 zone-melted germanium ingots are mainly used for preparing semiconductor single crystals, infrared optical germanium single crystals, and germanium alloys.
Development Information
Replace the following standards
Superseded by the following standards
Referenced Standards
YS/T 602-2006
GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced