GB/T 11093-1989
Replaced
GB/T 35316-2017
Active
National standards
GB/T 35316-2017 Collection of metallographs on defects of sapphire crystal
GB/T 35316-2017 Collection of metallographs on defects of sapphire crystal
Basic Information
Standard Code:
GB/T 35316-2017
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semi-metals and semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2017-12-29
Implement Date:
2018-07-01
Pages:
19 pages
Scope
This standard specifies the terms and definitions of defects in sapphire crystals, their morphological characteristics, and the causes of their occurrence.
This standard is applicable to the inspection and analysis of various defects in sapphire single-crystal materials during their preparation.
Development Information
Referenced Standards
GB/T 8756-1988 Collection of metallographs on defects of crystalline germanium
GB/T 8756-2018 Collection of metallographs on defects of germanium crystal
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 30453-2013 Metallographs collection for original defects of crystalline silicon
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced