GB/T 14140.1-1993
Replaced
GB/T 1557-2006
Replaced
National standards
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
Basic Information
Standard Code:
GB/T 1557-2006
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Analysis methods for semi-metallic and semiconductor materials
ICS Name:
Comprehensive Testing of Metal Materials
Publish Date:
2006-07-18
Implement Date:
2006-11-01
Pages:
7 pages
Scope
This standard specifies the method of determining the interstitial oxygen content in silicon single crystals using infrared spectroscopy. This standard is applicable to the measurement of interstitial oxygen content in n-type silicon single crystals with a room-temperature resistivity greater than 0.1 Ω·cm and p-type silicon single crystals with a room-temperature resistivity greater than 0.5 Ω·cm. The effective range of oxygen content measurement in this standard is from 1×1016 atoms/cm3 to the maximum solid solubility of interstitial oxygen in silicon.
Development Information
Replace the following standards
Superseded by the following standards
Referenced Standards
Related Standards
GB/T 14140.2-1993
Replaced
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 15615-1995
Abolished
GB/T 15615-1995 Test method for measuring flexure strength of silicon slices
GB/T 16481-1996
Abolished
GB/T 16481-1996 Standard spectrum tables of microwave plasma torch-atomic emitting spectrum of rare earth
GB/T 1550-1997
Replaced
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1553-1997
Replaced