GB/T 14140-2009 Replaced National standards

GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer

GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 14140-2009

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 12 pages

Scope

This standard specifies the method of measuring the diameter of silicon wafers using an optical projector. This standard is applicable to measuring the diameter of circular silicon wafers, with a maximum diameter of 300 mm. This standard is not applicable to measuring the non-circularity of silicon wafers.

Development Information

Word Count: 14 Thousand words Pages: 12 pages

Replace the following standards

GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method

Superseded by the following standards

GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer

Referenced Standards

GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6093-2001 Geometrical product specifications(GPS)—Length standards—Gauge blocks GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 12964-2018 Monocrystalline silicon polished wafers

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06