GB/T 12964-2003 Monocrystalline silicon polished wafers

GB 12964-1996

GB/T 12964-2018 Monocrystalline silicon polished wafers

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB 1558-1983 GB/T 2828-1987 GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6619-1995 Test methods for bow of silicon slices GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6621-1995 Test methods for surface flatness of silicon polished slices GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices GB/T 12962-1996 Monocrystalline silicon GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14143-1993 300～900μm Silicon slices—Measuring of interstitial oxygen content—Infrared absorption method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14844-1993 Designations of semiconductor materials YS/T 26-1992