GB/T 11093-1989
Replaced
GB/T 30868-2014
Replaced
National standards
GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers—Chemically etching
GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers—Chemically etching
Basic Information
Standard Code:
GB/T 30868-2014
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2014-07-24
Implement Date:
2015-02-01
Pages:
8 pages
Scope
This standard specifies the method of determining the density of silicon carbide single-crystal microtubes using the corrosion method with molten potassium hydroxide.
This standard is applicable to the determination of the density of silicon carbide single-crystal microtubes.
Development Information
Superseded by the following standards
Referenced Standards
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced