GB/T 6618-2009 Active National standards

GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices

GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 6618-2009

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 9 pages

Scope

This standard specifies the discrete and scanning measurement methods for the thickness and total thickness variation of silicon single-crystal cutting slices, grinding slices, polishing slices, and epitaxial slices (referred to as silicon slices). This standard is applicable to the measurement of the thickness and total thickness variation of silicon slices that conform to the dimensions specified in GB/T 12964, GB/T 12965, and GB/T 14139. Where the testing instruments permit, this standard can also be used for the measurement of the thickness and total thickness variation of silicon slices of other specifications.

Development Information

Word Count: 14 Thousand words Pages: 9 pages

Replace the following standards

GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices

Referenced Standards

GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 12964-2018 Monocrystalline silicon polished wafers GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers GB/T 14139-1993 Silicon epitaxial wafers GB/T 14139-2009 Silicon epitaxial wafers GB/T 14139-2019 Silicon epitaxial wafers

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06