GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method

Scope

This document describes a method of automatically non-contact scanning the warp and bend of silicon wafers on their surface using two probes.
This document is suitable for clean and dry silicon wafers with a diameter of not less than 50 mm and a thickness of not less than 100 μm, including silicon wafers with cutting, grinding, etching, polishing, epitaxy, etching or other surface states. It can also be used for testing the warp and bend of other semiconductor wafers such as gallium arsenide, silicon carbide, and sapphire.

Development Information

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