GB/T 6620-2009 Active National standards

GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning

GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 6620-2009

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 12 pages

Scope

This standard specifies a non-contact testing method for the warpage of silicon monocrystalline cutting slices, grinding slices, and polishing slices (hereinafter referred to as silicon slices). This standard is applicable to the measurement of circular silicon slices with a diameter greater than 50 mm and a thickness greater than 180 μm. This standard is also applicable to the measurement of the warpage of other semiconductor slices. The purpose of this testing method is to be used for incoming material inspection or process control. This testing method is also applicable to monitoring the thermochemical effects of silicon slice warpage during device processing.

Development Information

Word Count: 14 Thousand words Pages: 12 pages

Replace the following standards

GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning

Referenced Standards

GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials

Adopt standards

SEMI MF657-0705

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06