GB/T 11073-2025 Test method for measuring radial resistivity variation on silicon wafers

Scope

This document describes the method of measuring the radial resistivity changes of silicon single crystals using the direct four-probe method.
This document is applicable to the measurement of the radial resistivity changes of p-type silicon single crystals with a thickness less than the average probe spacing, a diameter greater than 15 mm, and a room-temperature resistivity ranging from 3×10-4 Ω·cm to 1.8×104 Ω·cm, as well as n-type silicon single crystals with a room-temperature resistivity ranging from 6×10-3 Ω·cm to 1×105 Ω·cm. The measurement of resistivity in other ranges of silicon single crystals should refer to this document for guidance.

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