GB/T 3656-1983
Replaced
GB/T 47082-2026
Active
National standards
GB/T 47082-2026 Test method for stacking faults of polished monocrystalline silicon carbide wafers
GB/T 47082-2026 Test method for stacking faults of polished monocrystalline silicon carbide wafers
Price:
$ 33.00
Basic Information
Standard Code:
GB/T 47082-2026
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Analysis methods for semi-metallic and semiconductor materials
ICS Name:
\nMetal material testing
Publish Date:
2026-01-28
Implement Date:
2026-08-01
Pages:
12 pages
Scope
This document describes the photoluminescence testing method for stacking dislocations in silicon carbide (SiC) single-crystal polished wafers.
This document is applicable to the testing of stacking dislocations in 4H silicon carbide (4H-SiC) single-crystal polished wafers.
Development Information
Referenced Standards
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 25915.1-2021 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness by particle concentration
GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
GB/T 30656-2023 Polished monocrystalline silicon carbide wafers
GB/T 43612-2023 Collection of metallographs on defects in silicon carbide crystal materials
Related Standards
GB/T 3657-1983
Replaced
GB/T 3657-1983 Measurement method of direct magnetic properties of soft magnetic alloys
GB/T 3849-1983
Replaced
GB/T 3849-1983 Hardmetals—Rockwell hardness (scale A) test method
GB/T 3850-1983
Replaced
GB/T 3850-1983 Impermeable sintered metal materials and hardmetals—determination of density
GB/T 3851-1983
Replaced
GB/T 3851-1983 Hardmetals—determination of transverse rupture strength
GB/T 4326-1984
Replaced