GB/T 11070-2006 Replaced National standards

GB/T 11070-2006 Reduced germanium ingot

GB/T 11070-2006 Reduced germanium ingot

Publish Date: 2006-07-18 Implement Date: 2006-11-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 11070-2006

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2006-07-18

Implement Date: 2006-11-01

Pages: 5 pages

Scope

This standard specifies the requirements, test methods, inspection rules, and marking, packaging, transportation, storage, and order forms (or contracts) for reduced germanium ingots. This standard applies to germanium ingots prepared by the hydrogen reduction method using high-purity germanium dioxide as the raw material. The products are mainly used for preparing zone-melted germanium ingots.

Development Information

Word Count: 7 Thousand words Pages: 5 pages

Replace the following standards

GB/T 11070-1989 Reduced germanium ingot

Superseded by the following standards

GB/T 11070-2017 Reduced germanium ingot

Referenced Standards

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 11069-1989 High purity germanium dioxide GB/T 11069-2006 High purity germanium dioxide GB/T 11069-2017 High purity germanium dioxide

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06