GB/T 4937.38-2025
Active
National standards
GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38:Soft error test method for semiconductor devices with memory
GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38:Soft error test method for semiconductor devices with memory
Price:
$ 54
Basic Information
Standard Code:
GB/T 4937.38-2025
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2025-12-02
Implement Date:
2026-07-01
Pages:
16 pages
Scope
This document describes the test method for evaluating the soft error sensitivity of semiconductor devices with storage in high-energy particle environments (such as alpha radiation). The document includes two test methods: accelerated testing using alpha particle radiation sources and real-time system testing (non-accelerated) caused by errors in natural radiation environments (such as alpha particles or neutrons). To comprehensively characterize the soft error characteristics of semiconductor devices with storage, it is also necessary to conduct high-energy neutron and thermal neutron tests according to other test methods. This test method is applicable to all semiconductor devices with storage.
Development Information
Same series standard
GB/T 4937.8-2025 Semiconductor devices—Mechanical and climatic test methods—Part 8:Sealing
GB/T 4937.10-2025 Semiconductor devices—Mechanical and climatic tests methods—Part 10:Mechanical Shock—Device and subassembly
GB/T 4937.16-2025 Semiconductor devices—Mechanical and climatic test methods—Part 16:Particle impact noise detection(PIND)
GB/T 4937.24-2025 Semiconductor devices—Mechanical and climatic test methods—Part 24:Accelerated moisture resistance—Unbiased HAST
GB/T 4937.25-2025 Semiconductor devices—Mechanical and climatic test methods—Part 25:Temperature cycling
GB/T 4937.29-2025 Semiconductor devices—Mechanical and climatic test methods—Part 29:Latch-up test
GB/T 4937.33-2025 Semiconductor devices—Mechanical and climatic test methods—Part 33:Accelerated moisture resistance—Unbiased autoclave
GB/T 4937.36-2025 Semiconductor devices—Mechanical and climatic test methods—Part 36:Acceleration,steady state
GB/T 4937.37-2025 Semiconductor devices—Mechanical and climatic test methods—Part 37:Board level drop test method using an accelerometer
GB/T 4937.39-2025 Semiconductor devices—Mechanical and climatic test methods—Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
GB/T 4937.40-2025 Semiconductor devices—Mechanical and climatic test methods—Part 40:Board level drop test method using a strain gauge
GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44:Neutron beam irradiated single event effect(SEE) test method for semiconductor devices
Adopt standards
IEC 60749-38:2008
Related Standards
GB/T 14264-1993
Replaced
GB/T 14844-1993
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GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
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GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
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GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active