GB/T 14264-1993
Replaced
GB/T 4937.44-2025
Pending
National standards
GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44:Neutron beam irradiated single event effect(SEE) test method for semiconductor devices
GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44:Neutron beam irradiated single event effect(SEE) test method for semiconductor devices
Basic Information
Standard Code:
GB/T 4937.44-2025
Standard Type:
National standards
Standard Status:
Pending
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2025-12-02
Implement Date:
2026-07-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
全国半导体器件标准化技术委员会(SAC/TC 78)
Pages:
20 pages
Scope
本文件描述了一种测量高密度集成电路单粒子效应(SEE)的试验方法，包括带存储的半导体器件在受到宇宙射线产生的大气中子辐照时的数据保持能力。通过已知注量率的中子辐照测量得到半导体器件的单粒子效应敏感性。该试验方法适用于任何种类集成电路。
注1： 高压半导体器件也会产生单粒子效应，包括单粒子烧毁(SEB)、单粒子栅穿(SEGR)等，本文件不包括此部分内容，请参考IEC 62396-4。
注2： 除高能中子外，能量小于1 eV的热中子也能导致部分器件产生软错误，本文件不包括此部分内容，请参考IEC 62396-5。
Development Information
Drafting Units:
工业和信息化部电子第五研究所、中国电子科技集团公司第十三研究所、广州盟标质量检测技术服务有限公司、吉林华微电子股份有限公司、广微(中山)智能科技有限公司
Drafting Persons:
何玉娟、张战刚、恩云飞、雷志锋、彭超、席善斌、来萍、黄云、何小琦、李强、常江、张晓全、曹宏建、杨少华
Same series standard
GB/T 4937.8-2025 Semiconductor devices—Mechanical and climatic test methods—Part 8:Sealing
GB/T 4937.10-2025 Semiconductor devices—Mechanical and climatic tests methods—Part 10:Mechanical Shock—Device and subassembly
GB/T 4937.16-2025 Semiconductor devices—Mechanical and climatic test methods—Part 16:Particle impact noise detection(PIND)
GB/T 4937.24-2025 Semiconductor devices—Mechanical and climatic test methods—Part 24:Accelerated moisture resistance—Unbiased HAST
GB/T 4937.25-2025 Semiconductor devices—Mechanical and climatic test methods—Part 25:Temperature cycling
GB/T 4937.29-2025 Semiconductor devices—Mechanical and climatic test methods—Part 29:Latch-up test
GB/T 4937.33-2025 Semiconductor devices—Mechanical and climatic test methods—Part 33:Accelerated moisture resistance—Unbiased autoclave
GB/T 4937.36-2025 Semiconductor devices—Mechanical and climatic test methods—Part 36:Acceleration,steady state
GB/T 4937.37-2025 Semiconductor devices—Mechanical and climatic test methods—Part 37:Board level drop test method using an accelerometer
GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38:Soft error test method for semiconductor devices with memory
GB/T 4937.39-2025 Semiconductor devices—Mechanical and climatic test methods—Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
GB/T 4937.40-2025 Semiconductor devices—Mechanical and climatic test methods—Part 40:Board level drop test method using a strain gauge
Adopt standards
IEC 60749-44:2016
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active