GB/T 14264-1993
Replaced
GB/T 4937.44-2025
Active
National standards
GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44:Neutron beam irradiated single event effect(SEE) test method for semiconductor devices
GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44:Neutron beam irradiated single event effect(SEE) test method for semiconductor devices
Price:
$ 65
Basic Information
Standard Code:
GB/T 4937.44-2025
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2025-12-02
Implement Date:
2026-07-01
Pages:
20 pages
Scope
This document describes a test method for measuring the single-event effect (SEE) of high-density integrated circuits, including the data retention capability of semiconductor devices subjected to atmospheric neutron irradiation from cosmic rays. The single-event effect sensitivity of semiconductor devices is measured through neutron irradiation at a known dose rate. This test method is applicable to any type of integrated circuit. Note 1: High-voltage semiconductor devices can also exhibit single-event effects, including single-event burnout (SEB) and single-event gate latch-up (SEGR), etc. This document does not cover this part. Please refer to IEC 62396-4. Note 2: In addition to high-energy neutrons, thermal neutrons with energy less than 1 eV can also cause soft errors in some devices. This document does not cover this part. Please refer to IEC 62396-5.
Development Information
Same series standard
GB/T 4937.8-2025 Semiconductor devices—Mechanical and climatic test methods—Part 8:Sealing
GB/T 4937.10-2025 Semiconductor devices—Mechanical and climatic tests methods—Part 10:Mechanical Shock—Device and subassembly
GB/T 4937.16-2025 Semiconductor devices—Mechanical and climatic test methods—Part 16:Particle impact noise detection(PIND)
GB/T 4937.24-2025 Semiconductor devices—Mechanical and climatic test methods—Part 24:Accelerated moisture resistance—Unbiased HAST
GB/T 4937.25-2025 Semiconductor devices—Mechanical and climatic test methods—Part 25:Temperature cycling
GB/T 4937.29-2025 Semiconductor devices—Mechanical and climatic test methods—Part 29:Latch-up test
GB/T 4937.33-2025 Semiconductor devices—Mechanical and climatic test methods—Part 33:Accelerated moisture resistance—Unbiased autoclave
GB/T 4937.36-2025 Semiconductor devices—Mechanical and climatic test methods—Part 36:Acceleration,steady state
GB/T 4937.37-2025 Semiconductor devices—Mechanical and climatic test methods—Part 37:Board level drop test method using an accelerometer
GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38:Soft error test method for semiconductor devices with memory
GB/T 4937.39-2025 Semiconductor devices—Mechanical and climatic test methods—Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
GB/T 4937.40-2025 Semiconductor devices—Mechanical and climatic test methods—Part 40:Board level drop test method using a strain gauge
Adopt standards
IEC 60749-44:2016
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active