GB/T 14264-1993
Replaced
GB/T 4937.29-2025
Pending
National standards
GB/T 4937.29-2025 Semiconductor devices—Mechanical and climatic test methods—Part 29:Latch-up test
GB/T 4937.29-2025 Semiconductor devices—Mechanical and climatic test methods—Part 29:Latch-up test
Basic Information
Standard Code:
GB/T 4937.29-2025
Standard Type:
National standards
Standard Status:
Pending
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2025-12-02
Implement Date:
2026-07-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
全国半导体器件标准化技术委员会(SAC/TC 78)
Pages:
28 pages
Scope
本文件描述了集成电路的电流和过电压闩锁试验方法。
本试验是破坏性试验。
本试验的目的是建立一种判断集成电路闩锁特性的方法和规定闩锁的失效判据。闩锁特性用来判断产品的可靠性，并减少由于闩锁引起的无法定位故障(NTF)和过电应力(EOS)失效。
本试验方法主要适用于互补金属氧化物半导体(CMOS)器件，若应用于其他工艺技术则需另行确认适用性。
闩锁试验根据温度的分类见4.1，失效等级判据见4.2。
Development Information
Drafting Units:
工业和信息化部电子第五研究所、北京智芯微电子科技有限公司、广州七喜智能设备有限公司、安徽安芯电子科技股份有限公司、深圳市金誉半导体股份有限公司、山东省中智科标准化研究院有限公司
Drafting Persons:
来萍、肖庆中、师谦、恩云飞、周圣泽、路国光、赖灿雄、赵东艳、徐平江、单书珊、高斌、汪良恩、李明钢、邓海峰
Same series standard
GB/T 4937.8-2025 Semiconductor devices—Mechanical and climatic test methods—Part 8:Sealing
GB/T 4937.10-2025 Semiconductor devices—Mechanical and climatic tests methods—Part 10:Mechanical Shock—Device and subassembly
GB/T 4937.16-2025 Semiconductor devices—Mechanical and climatic test methods—Part 16:Particle impact noise detection(PIND)
GB/T 4937.24-2025 Semiconductor devices—Mechanical and climatic test methods—Part 24:Accelerated moisture resistance—Unbiased HAST
GB/T 4937.25-2025 Semiconductor devices—Mechanical and climatic test methods—Part 25:Temperature cycling
GB/T 4937.33-2025 Semiconductor devices—Mechanical and climatic test methods—Part 33:Accelerated moisture resistance—Unbiased autoclave
GB/T 4937.36-2025 Semiconductor devices—Mechanical and climatic test methods—Part 36:Acceleration,steady state
GB/T 4937.37-2025 Semiconductor devices—Mechanical and climatic test methods—Part 37:Board level drop test method using an accelerometer
GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38:Soft error test method for semiconductor devices with memory
GB/T 4937.39-2025 Semiconductor devices—Mechanical and climatic test methods—Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
GB/T 4937.40-2025 Semiconductor devices—Mechanical and climatic test methods—Part 40:Board level drop test method using a strain gauge
GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44:Neutron beam irradiated single event effect(SEE) test method for semiconductor devices
Adopt standards
IEC 60749-29:2011
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active