GB/T 37051-2018 Active National standards

GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer

GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer

Publish Date: 2018-12-28 Implement Date: 2019-04-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 37051-2018

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2018-12-28

Implement Date: 2019-04-01

Pages: 9 pages

Scope

This standard specifies the method for determining the crystal defect density of solar-grade polycrystalline silicon ingots and silicon wafers, including the method overview, reagents and materials, instruments and equipment, sample preparation, test steps, data processing, precision, interference factors, and reporting.
This standard is applicable to the determination of the crystal defect density of solar-grade polycrystalline silicon ingots and silicon wafers.

Development Information

Word Count: 14 Thousand words Pages: 9 pages

Referenced Standards

GB/T 6379.2-2004 Accuracy(trueness and precision)of measurement methods and results—Part 2:Basic method for the determination of repeatability and reproducibility of a standard measurement method GB/T 25915.1-2010 Cleanrooms and associated controlled environments—Part 1:Classification of air cleanliness GB/T 29054-2012 Solar-grade casting multi-crystalline silicon brick GB/T 29054-2019 Casting multicrystalline silicon brick for photovoltaic solar cell GB/T 29055-2012 Multi-crystalline silicon wafer for solar cell GB/T 29055-2019 Multicrystalline silicon wafers for photovoltaic solar cell

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