GB/T 11093-1989
Replaced
GB/T 29054-2019
Active
National standards
GB/T 29054-2019 Casting multicrystalline silicon brick for photovoltaic solar cell
GB/T 29054-2019 Casting multicrystalline silicon brick for photovoltaic solar cell
Price:
$ 50
Basic Information
Standard Code:
GB/T 29054-2019
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2019-06-04
Implement Date:
2020-05-01
Pages:
9 pages
Scope
This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificates, and the contents of purchase orders (or contracts) for cast polycrystalline silicon blocks (hereinafter referred to as silicon blocks) used in solar batteries.
This standard applies to quasi-square polycrystalline silicon blocks (including monocrystalline-like silicon blocks) cut from silicon ingots prepared by casting technology.
Development Information
Replace the following standards
Referenced Standards
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced