GB/T 29054-2019 Active National standards

GB/T 29054-2019 Casting multicrystalline silicon brick for photovoltaic solar cell

Publish Date: 2019-06-04 Implement Date: 2020-05-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 29054-2019

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2019-06-04

Implement Date: 2020-05-01

Publisher: 国家市场监督管理总局、中国国家标准化管理委员会

Technical Committee: 全国半导体设备和材料标准化技术委员会(SAC/TC 203)、全国半导体设备和材料标准化技术委员会材料分技术委员会(SAC/TC 203/SC 2)

Pages: 9 pages

Scope

本标准规定了太阳能电池用铸造多晶硅块（以下简称硅块）的要求、试验方法、检验规则、标志、包装、运输、贮存、质量证明书和订货单（或合同）内容。
本标准适用于从铸造技术制备的硅锭上切割得到的准方形多晶硅块（包括类单晶硅块）。

Development Information

Drafting Units:

江苏协鑫硅材料科技发展有限公司、镇江仁德新能源科技有限公司、江西赛维LDK太阳能高科技有限公司、宜昌南玻硅材料有限公司、有色金属技术经济研究院、扬州荣德新能源科技有限公司、英利能源(中国)有限公司

Drafting Persons:

万跃鹏、唐骏、游达、林清香、苏磊、杨素心、余刚、高长昆、常传波、李建敏、何亮、陈发勤、孙培亚、张雷

Word Count: 16 Thousand words Pages: 9 pages

Replace the following standards

GB/T 29054-2012 Solar-grade casting multi-crystalline silicon brick

Referenced Standards

GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06